Data Sheet PU10322EJ01V0DS
3
NE5511279A
ELECTRICAL CHARACTERISTICS
(TA
= +25?C, unless otherwise specified, using our standard test fixture)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSS
VGS
= 6.0 V
?
?
100
nA
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IDSS
VDS
= 8.5 V
?
?
100
nA
Gate Threshold Voltage
Vth
VDS
= 4.8 V, IDS
= 1.5 mA
1.0
1.5
2.0
V
Thermal Resistance
Rth
Channel to Case
?
5
?
?C/W
Transconductance
gm
VDS
= 3.5 V, IDS
= 900 mA
?
2.3
?
S
Drain to Source Breakdown Voltage
BVDSS
IDSS
= 15 ?A
20
24
?
V
Output Power
Pout
f = 900 MHz, VDS
= 7.5 V,
38.5
40.0
?
dBm
Drain Current
ID
Pin
= 27 dBm,
?
2.5
?
A
Power Added Efficiency
?add
IDset
= 400 mA (RF OFF)
42
48
?
%
Linear Gain
GL
Note
?
15.0
?
dB
Output Power
Pout
f = 460 MHz, VDS
= 7.5 V,
?
40.5
?
dBm
Drain Current
ID
Pin
= 25 dBm,
?
2.75
?
A
Power Added Efficiency
?add
IDset
= 400 mA (RF OFF)
?
50
?
%
Linear Gain
GL
Note
?
18.5
?
dB
Note
Pin
= 5 dBm
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
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